CATHODOLUMINESCENCE STUDY OF PLASTICALLY DEFORMED GAAS

被引：15

作者：

ESQUIVEL, AL ^{[1
]}

LIN, WN ^{[1
]}

WITTRY, DB ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

关键词：

D O I：

10.1063/1.1654695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：414 / 416

页数：3

共 7 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] ESQUIVEL AL, 1972, B AM PHYS SOC, V17, P61
[3] DISLOCATIONS AS TRAPS FOR HOLES IN GERMANIUM
FIGIELSK.T
[J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 555 - &
[4] MECHANISM OF ELECTRON CAPTURE BY A DISLOCATION
FIGIELSK.T
[J]. PHYSICA STATUS SOLIDI, 1965, 10 (01): : 75 - &
[5] RECOMBINATION OF ELECTRONS AND HOLES AT DISLOCATIONS
MORRISON, SR
[J]. PHYSICAL REVIEW, 1956, 104 (03): : 619 - 623
[6] SOME GEOMETRICAL RELATIONS IN DISLOCATED CRYSTALS
NYE, JF
[J]. ACTA METALLURGICA, 1953, 1 (02): : 153 - 162
[7] WERTHEIM GK, 1953, PHYS REV, V107, P694