BEHAVIOR OF MN IN GASB GROWN BY THE BRIDGMAN METHOD

Mn-doped gallium antimonide crystals were grown by the vertical Bridgman method. The surface morphology was studied with the high resolution microscope and the etch pit density (EPD) was determined by the image analysis method. The absolute distribution coefficient k(absolute) and the active distribution coefficient k(active) of Mn were determined from impurity analysis by the inductively coupled plasma method and from the hole concentration obtained by Hall coefficient measurements respectively. The impurity activation energy of Mn in GaSb was calculated from the slope of the variation in both conductivity and hole concentration with temperature. The variation in hole mobility with temperature was also studied to predict the nature of the scattering. It was concluded that Mn produces a shallow acceptor level (17-18 meV) in GaSb and its inclusion did not reduce the EPD.