OBSERVATION OF VOLTAGE CONTRAST IN SCANNING ION MICROSCOPY OF INTEGRATED-CIRCUITS

被引：5

作者：

KIRK, ECG

CLEAVER, JRA

AHMED, H

机构：

[1] Microelectronics Research Group, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 11期

关键词：

ION BEAMS;

D O I：

10.1049/el:19870420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strong voltage contrast effects have been observed in scanning ion microscopy of integrated circuits. The ion beam has also been used to cut microsections in integrated circuits, with precise control of position and depth. The voltage distributions in these sections can be observed.

引用

页码：585 / 586

页数：2