COMPUTER SIMULATION OF UHF-TRANSISTOR SMALL-SIGNAL BEHAVIOUR AT HIGH FREQUENCIES

被引：1

作者：

CAUGHEY, DM

机构：

[1] Northern Electric Co. Research and Development Laboratories, Ottawa

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 08期

关键词：

D O I：

10.1049/el:19690124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-frequency 2-port parameters of a u.h.f. transistor are presented, which have been derived from the numerical 1-dimensional solution of small-signal internal behaviour. Results shown include the a locus and the determination of fT from h/g in the gigahertz region. The validity of the n equivalent circuit is discussed. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：165 / &

共 6 条

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CAUGHEY, DM
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[2] COMPUTER SIMULATION OF A GOLD DOPED DIODE
CAUGHEY, DM
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[3] CAUGHEY DM, 1969, MAR IEEE EUR SEM DEV
[4] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
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NOYCE, RN
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[6] THOMAS DE, 1958, P I RADIO ENGRS, V46, P1174

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