TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES

被引：3

作者：

MCCOWEN, A

SHAARI, SBH

BOARD, K

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1988年 / 135卷 / 03期

关键词：

D O I：

10.1049/ip-i-1.1988.0013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 75

页数：5

共 8 条

[1] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J].

CROWELL, CR ;

BEGUWALA, M .

SOLID-STATE ELECTRONICS, 1971, 14 (11) :1149-&

[2] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[3] MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (10) :1141-1150

[4]

GREILING PT, 1987, IEEE T MICROW THEORY, V35, P245, DOI 10.1109/TMTT.1987.1133636

[5] A SIMPLE-MODEL FOR COMPUTER-SIMULATION OF SCHOTTKY-BARRIER DIODES [J].

GUO, SF .

SOLID-STATE ELECTRONICS, 1984, 27 (06) :537-543

[6] COMPUTER MODELING AND COMPARISON OF DIFFERENT RECTIFIER (M-S, M-S-M, P-N-N+) DIODES [J].

MASSZI, F ;

TOVE, PA ;

BOHLIN, K ;

NORDE, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :469-476

[7]

MCCOWEN A, 1986, INT C SIMULATION SEM

[8] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].

SCHARFETTER, DL ;

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :64-+

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