HIGH-TEMPERATURE LIFETESTING OF AL-SIOX-P-SI CONTACTS FOR MIS SOLAR-CELLS

被引：25

作者：

GODFREY, RB

GREEN, MA

机构：

[1] School of Electrical Engineering, University of New South Wales, Kensington

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 12期

关键词：

D O I：

10.1063/1.90701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-temperature lifetesting of Al/SiOx (10-15 Å)/p-Si contacts for high-efficiency MIS solar cells is reported. Electrical degradation in the temperature range 270-400°C was governed by an activation energy of 2.56±0.12 eV, indicating that the reduction of the thin oxide layer by Al was the mechanism responsible. Extrapolating to lower temperatures indicates that this process proceeds at a negligible rate below 200°C.

引用

页码：860 / 861

页数：2

共 15 条

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