BULK III-V COMPOUND SEMICONDUCTOR CRYSTAL-GROWTH

被引：13

作者：

CLEMANS, JE

EJIM, TI

GAULT, WA

MONBERG, EM

机构：

[1] AT&T MICROELECTR,DEPT LIGHTWAVE COMPOUND MAT & WAFER FABRICAT,READING,PA

[2] AT&T BELL LABS,OPT MAT RES DEPT,MURRAY HILL,NJ 07974

来源：

AT&T TECHNICAL JOURNAL | 1989年 / 68卷 / 01期

关键词：

D O I：

10.1002/j.1538-7305.1989.tb00644.x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：29 / 42

页数：14

共 9 条

[1] THE PRODUCTION OF HIGH-QUALITY, III-V COMPOUND SEMICONDUCTOR CRYSTALS [J].

CLEMANS, JE ;

GAULT, WA ;

MONBERG, EM .

AT&T TECHNICAL JOURNAL, 1986, 65 (04) :86-98

[2]

CLEMANS JE, 1988, 5TH P C SEM III V MA

[3] A NOVEL APPLICATION OF THE VERTICAL GRADIENT FREEZE METHOD TO THE GROWTH OF HIGH-QUALITY III-V CRYSTALS [J].

GAULT, WA ;

MONBERG, EM ;

CLEMANS, JE .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :491-506

[4] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J].

GOTTSCHALK, H ;

PATZER, G ;

ALEXANDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :207-217

[5] A COMPARATIVE-STUDY OF THERMAL-STRESS INDUCED DISLOCATION GENERATION IN PULLED GAAS, INP, AND SI CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR ;

NIELSEN, JW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3331-3336

[6] THE DYNAMIC GRADIENT FREEZE GROWTH OF INP [J].

MONBERG, EM ;

BROWN, H ;

BONNER, CE .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (01) :109-114

[7] THE GROWTH AND CHARACTERIZATION OF LARGE SIZE, HIGH-QUALITY, INP SINGLE-CRYSTALS [J].

MONBERG, EM ;

GAULT, WA ;

DOMINGUEZ, F ;

SIMCHOCK, F ;

CHU, SNG ;

STILES, CM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (02) :500-503

[8]

MONBERG EM, 1988, 5TH P C SEM III V MA

[9] IMPURITY EFFECT ON GROWTH OF DISLOCATION-FREE INP SINGLE-CRYSTALS [J].

SEKI, Y ;

MATSUI, J ;

WATANABE, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3374-3376

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