NATURE OF THERMAL-STRESSES AND POTENTIAL FOR REDUCED THERMAL BUCKLING OF THIN SILICON RIBBON GROWN AT HIGH-SPEED

被引：30

作者：

GURTLER, RW

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(80)90232-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：69 / 82

页数：14

共 15 条

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[3] BOLEY BA, 1960, THEORY THERMAL STRES, P323
[4] BOLEY BA, 1960, THEORY THERMAL STRES, P261
[5] COX HL, 1963, BUCKLING PLATES SHEL, P21
[6] GRAHAM CD, 1976, ERDAJPL954506762 Q R
[7] SILICON RIBBON GROWTH VIA RIBBON-TO-RIBBON (RTR) TECHNIQUE - PROCESS UPDATE AND MATERIAL CHARACTERIZATION
GURTLER, RW
BAGHDADI, A
ELLIS, RJ
LESK, IA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 441 - 477
[8] GURTLER RW, 1976, ERDAJPL954376762 TEC, P25
[9] GURTLER RW, 1977, DOEJPL954376781 TECH, P14
[10] KUNZ KS, 1957, NUMERICAL ANAL, P275