SILICON RIBBON GROWTH VIA RIBBON-TO-RIBBON (RTR) TECHNIQUE - PROCESS UPDATE AND MATERIAL CHARACTERIZATION

[1] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2550 - &

[2] GURTLER RW, 1976, ERDAJPL954376762 REP

[3] GURTLER RW, UNPUBLISHED

[4] HOLDEN SC, 1977, ERDAJPL954374772 REP

[5] HORNSTRA J, 1959, PHILIPS RES REP, V14, P237

[6] INFRARED STUDIES OF BIREFRINGENCE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1631 - 1638

[7] Lesk I. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P173

[8] MORRISON AD, 1976, ERDAJPL9543557611 AN

[9] RAVI KV, 1976, 12TH P IEEE PHOT SPE, P280

[10] REA SN, 1976, ERDAJPL763 REP

[1] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2550 - &

[2] GURTLER RW, 1976, ERDAJPL954376762 REP

[3] GURTLER RW, UNPUBLISHED

[4] HOLDEN SC, 1977, ERDAJPL954374772 REP

[5] HORNSTRA J, 1959, PHILIPS RES REP, V14, P237

[6] INFRARED STUDIES OF BIREFRINGENCE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1631 - 1638

[7] Lesk I. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P173

[8] MORRISON AD, 1976, ERDAJPL9543557611 AN

[9] RAVI KV, 1976, 12TH P IEEE PHOT SPE, P280

[10] REA SN, 1976, ERDAJPL763 REP