INFRARED STUDIES OF BIREFRINGENCE IN SILICON

[1] BARRET CS, 1952, STRUCTURE METALS, P316

[2] BOND WL, 1955, DEC S DEF CRYST SOL

[3] DEPTH OF SURFACE DAMAGE DUE TO ABRASION ON GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 593 - 597

[4] A STUDY OF THE ETCHING RATE OF SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (10) : 586 - 593

[5] RESISTIVITY STRIATIONS IN GERMANIUM CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (04) : 459 - 463

[6] COKER EG, 1931, TREATISE PHOTO ELAST

[7] DISTORTED LAYERS IN SILICON PRODUCED BY GRINDING AND POLISHING [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) : 228 - 229

[8] DASH WC, 1955, MAR AM PHYS SOC M BA

[9] DOREMUS, 1958, GROWTH PERFECTION CR, P383

[10] DRUDE P, THEORY OPTICS, P314

[1] BARRET CS, 1952, STRUCTURE METALS, P316

[2] BOND WL, 1955, DEC S DEF CRYST SOL

[3] DEPTH OF SURFACE DAMAGE DUE TO ABRASION ON GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 593 - 597

[4] A STUDY OF THE ETCHING RATE OF SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (10) : 586 - 593

[5] RESISTIVITY STRIATIONS IN GERMANIUM CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (04) : 459 - 463

[6] COKER EG, 1931, TREATISE PHOTO ELAST

[7] DISTORTED LAYERS IN SILICON PRODUCED BY GRINDING AND POLISHING [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) : 228 - 229

[8] DASH WC, 1955, MAR AM PHYS SOC M BA

[9] DOREMUS, 1958, GROWTH PERFECTION CR, P383

[10] DRUDE P, THEORY OPTICS, P314