ON THE ROLE OF THE DANGLING BOND AS A RADIATIVE CENTER IN A-SI-H

被引：25

作者：

DEPINNA, SP ^{[1
]}

CAVENETT, BC ^{[1
]}

AUSTIN, IG ^{[1
]}

SEARLE, TM ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1098(82)91046-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：263 / 267

页数：5

共 10 条

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[8] THEORY OF THE RESONANT AND NON-RESONANT LUMINESCENCE CHANGES IN AMORPHOUS-SILICON
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[9] RECOMBINATION IN ALPHA-SI-H - DEFECT LUMINESCENCE
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[10] INFLUENCE OF SPIN DEFECTS ON RECOMBINATION AND ELECTRONIC TRANSPORT IN AMORPHOUS-SILICON
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