P-N JUNCTIONS AS ARTIFICIAL DIFFUSION BARRIERS FOR NATIVE DEFECTS

被引：3

作者：

AVEN, M

HALL, RB

GARWACKI, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 09期

关键词：

D O I：

10.1063/1.1652618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：292 / &

共 11 条

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AVEN, M ;

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[4]

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[5]

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[8] SELF-COMPENSATION-LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .3. EXPECTED CORRELATIONS WITH FUNDAMENTAL PARAMETERS [J].

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[9]

SWANK RK, TO BE PUBLISHED

[10] HIGH TEMPERATURE CONDUCTIVITY OF ZNTE IN ZINC VAPOR [J].

THOMAS, DG ;

SADOWSKI, EA .

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