INTERFACIAL BARRIER OF HETEROJUNCTION PHOTOCATHODES

被引：19

作者：

MILTON, AF

BAER, AD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.1659897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5095 / &

共 18 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2]

BELL RE, PRIVATE COMMUNICATIO

[3] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J].

BELL, RL ;

SPICER, WE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11) :1788-+

[4] MECHANISM OF WORK-FUNCTION REDUCTION BY OXYGEN ADSORPTION [J].

CHEN, JM .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) :5008-+

[5] THERMIONIC AND SEMICONDUCTING PROPERTIES OF [AG]-CS2O, AG, CS [J].

DAVEY, JE .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (09) :1031-1034

[6] FACTORS AFFECTING PHOTOEMISSION FROM CAESIUM OXIDE COVERED GAAS [J].

GARBE, S .

SOLID-STATE ELECTRONICS, 1969, 12 (11) :893-+

[7] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J].

JAMES, LW ;

UEBBING, JJ .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :370-&

[8] P-N HETEROJUNCTIONS [J].

PERLMAN, SS ;

FEUCHT, DL .

SOLID-STATE ELECTRONICS, 1964, 7 (12) :911-923

[9] PHOTOEMISSION FROM P-GASB TREATED WITH CESIUM AND OXYGEN [J].

SCHAEFER, DL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :445-&

[10] THICKNESS OF CS AND CS-O FILMS ON GAAS(CS) AND GAAS(CS-O) PHOTOCATHODES [J].

SOMMER, AH ;

WHITAKER, HH ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1970, 17 (07) :273-&

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