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THICKNESS OF CS AND CS-O FILMS ON GAAS(CS) AND GAAS(CS-O) PHOTOCATHODES
被引:46
作者
:
SOMMER, AH
论文数:
0
引用数:
0
h-index:
0
SOMMER, AH
WHITAKER, HH
论文数:
0
引用数:
0
h-index:
0
WHITAKER, HH
WILLIAMS, BF
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, BF
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1970年
/ 17卷
/ 07期
关键词
:
D O I
:
10.1063/1.1653398
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:273 / &
相关论文
共 7 条
[1]
EFFICIENT PHOTOEMISSION FROM GAAS EPITAXIAL LAYERS
GARBE, S
论文数:
0
引用数:
0
h-index:
0
GARBE, S
FRANK, G
论文数:
0
引用数:
0
h-index:
0
FRANK, G
[J].
SOLID STATE COMMUNICATIONS,
1969,
7
(08)
: 615
-
+
[2]
JAMES LW, 1968, 2 P INT S GALL ARS L, P230
[3]
GaAs-Cs: A NEW TYPE OF PHOTOEMITTER
Scheer, J. J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
Scheer, J. J.
van Laar, J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
van Laar, J.
[J].
SOLID STATE COMMUNICATIONS,
1965,
3
(08)
: 189
-
193
[4]
LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS
SONNENBE.H
论文数:
0
引用数:
0
h-index:
0
机构:
Sylvania Electro-Optics Organization, Mountain View
SONNENBE.H
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(09)
: 289
-
&
[5]
EFFECT OF ACCEPTOR DENSITY ON PHOTOEMISSION FROM P-GAAS-CS AND -CS2O
SONNENBERG, H
论文数:
0
引用数:
0
h-index:
0
机构:
Sylvania Electro-Optics Organization, Mountain View
SONNENBERG, H
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
: 3414
-
+
[6]
SWANK, 1970, J APPL PHYS, V41, P778
[7]
PHOTOEMISSION FROM GAAS-CS-O
TURNBULL, AA
论文数:
0
引用数:
0
h-index:
0
TURNBULL, AA
EVANS, GB
论文数:
0
引用数:
0
h-index:
0
EVANS, GB
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1968,
1
(02)
: 155
-
&
←
1
→
共 7 条
[1]
EFFICIENT PHOTOEMISSION FROM GAAS EPITAXIAL LAYERS
GARBE, S
论文数:
0
引用数:
0
h-index:
0
GARBE, S
FRANK, G
论文数:
0
引用数:
0
h-index:
0
FRANK, G
[J].
SOLID STATE COMMUNICATIONS,
1969,
7
(08)
: 615
-
+
[2]
JAMES LW, 1968, 2 P INT S GALL ARS L, P230
[3]
GaAs-Cs: A NEW TYPE OF PHOTOEMITTER
Scheer, J. J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
Scheer, J. J.
van Laar, J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
van Laar, J.
[J].
SOLID STATE COMMUNICATIONS,
1965,
3
(08)
: 189
-
193
[4]
LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS
SONNENBE.H
论文数:
0
引用数:
0
h-index:
0
机构:
Sylvania Electro-Optics Organization, Mountain View
SONNENBE.H
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(09)
: 289
-
&
[5]
EFFECT OF ACCEPTOR DENSITY ON PHOTOEMISSION FROM P-GAAS-CS AND -CS2O
SONNENBERG, H
论文数:
0
引用数:
0
h-index:
0
机构:
Sylvania Electro-Optics Organization, Mountain View
SONNENBERG, H
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
: 3414
-
+
[6]
SWANK, 1970, J APPL PHYS, V41, P778
[7]
PHOTOEMISSION FROM GAAS-CS-O
TURNBULL, AA
论文数:
0
引用数:
0
h-index:
0
TURNBULL, AA
EVANS, GB
论文数:
0
引用数:
0
h-index:
0
EVANS, GB
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1968,
1
(02)
: 155
-
&
←
1
→