EFFECT OF ACCEPTOR DENSITY ON PHOTOEMISSION FROM P-GAAS-CS AND -CS2O

[1] EXPERIMENTAL EVIDENCE FOR OPTICAL POPULATION OF X MINIMA IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (15) : 597 - &

[2] GARBE S, UNPUBLISHED

[3] JAMES LW, 1969, DA44009AMC1474T CONT

[4] JAMES LW, 1968, 9 STANF EL LAB QUART, P3

[5] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[6] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193

[7] FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (04) : 303 - &

[8] LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 289 - &

[9] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[10] PHOTOEMISSION FROM GAAS-CS-O [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) : 155 - &

[1] EXPERIMENTAL EVIDENCE FOR OPTICAL POPULATION OF X MINIMA IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (15) : 597 - &

[2] GARBE S, UNPUBLISHED

[3] JAMES LW, 1969, DA44009AMC1474T CONT

[4] JAMES LW, 1968, 9 STANF EL LAB QUART, P3

[5] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[6] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193

[7] FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (04) : 303 - &

[8] LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 289 - &

[9] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[10] PHOTOEMISSION FROM GAAS-CS-O [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) : 155 - &