INSITU CHARACTERIZATION OF ORGANOMETALLIC GROWTH OF ZNSE USING GRAZING-INCIDENCE X-RAY-SCATTERING

被引：11

作者：

KISKER, DW ^{[1
]}

FUOSS, PH ^{[1
]}

BRENNAN, S ^{[1
]}

RENAUD, G ^{[1
]}

TOKUDA, KL ^{[1
]}

KAHN, JL ^{[1
]}

机构：

[1] STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94309

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

10;

D O I：

10.1016/0022-0248(90)90933-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have used in situ grazing incidence x-ray scattering to probe the near atmospheric pressure (100 Torr) OMVPE growth of ZnSe on GaAs. For the first time, we have directly observed the establishment of a clean GaAs surface in a hydrogen ambient with a characteristic (2×4) reconstruction and followed the development of the ZnSe epitaxial film during the initial stages of growth. Our results indicate the presence of a very stable and well-ordered p(2×1) reconstruction during growth, despite the presence of the ambient carrier gas and organic reaction by-products. In addition, by observing the changes in X-ray reflectivity due to the introduction of source compounds, we have also been able to investigate kinetic effects during alternating source growth. © 1989.

引用

页码：42 / 47

页数：6

共 10 条

[1] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J].