KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION

被引:118
作者
ASPNES, DE
COLAS, E
STUDNA, AA
BHAT, R
KOZA, MA
KERAMIDAS, VG
机构
关键词
D O I
10.1103/PhysRevLett.61.2782
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2782 / 2785
页数:4
相关论文
共 19 条
[1]   OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690
[2]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332
[3]   ULTRAVIOLET-ASSISTED GROWTH OF GAAS [J].
BALK, P ;
FISCHER, M ;
GRUNDMANN, D ;
LUCKERATH, R ;
LUTH, H ;
RICHTER, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1453-1459
[4]   INSITU, REAL-TIME DIAGNOSTICS OF OMVPE USING IR-DIODE LASER SPECTROSCOPY [J].
BUTLER, JE ;
BOTTKA, N ;
SILLMON, RS ;
GASKILL, DK .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :163-171
[5]  
COLAS E, IN PRESS J CRYST GRO
[6]   HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].
DAPKUS, PD ;
MANASEVIT, HM ;
HESS, KL ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23
[7]   GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J].
DENBAARS, SP ;
BEYLER, CA ;
HARIZ, A ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1987, 51 (19) :1530-1532
[8]   HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD [J].
DENBAARS, SP ;
MAA, BY ;
DAPKUS, PD ;
DANNER, AD ;
LEE, HC .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :188-193
[9]  
DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795
[10]   PYROLYSIS OF TRIMETHYL GALLIUM [J].
JACKO, MG ;
PRICE, SJW .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06) :1560-&