ULTRAVIOLET-ASSISTED GROWTH OF GAAS

被引：30

作者：

BALK, P ^{[1
]}

FISCHER, M ^{[1
]}

GRUNDMANN, D ^{[1
]}

LUCKERATH, R ^{[1
]}

LUTH, H ^{[1
]}

RICHTER, W ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.583841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1453 / 1459

页数：7

共 30 条

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[7] EXCIMER LASER-INDUCED DEPOSITION OF INP - CRYSTALLOGRAPHIC AND MECHANISTIC STUDIES
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[8] GILGEN HH, 1984, SPRINGER SER CHEM PH, V39, P225
[9] MECHANISMS OF METALLO-ORGANIC VAPOR-PHASE EPITAXY AND ROUTES TO A ULTRAVIOLET-ASSISTED PROCESS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1456 - 1459
[10] THE VAPOR-PHASE ULTRAVIOLET-SPECTRA OF METALLO-ORGANIC PRECURSORS TO III-V-COMPOUNDS
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[J]. JOURNAL OF MATERIALS SCIENCE, 1983, 18 (04) : 1072 - 1076