MECHANISMS OF METALLO-ORGANIC VAPOR-PHASE EPITAXY AND ROUTES TO A ULTRAVIOLET-ASSISTED PROCESS

[1] Aylett M. R., 1983, Laser Diagnostics and Photochemical Processing for Semiconductor Devices. Proceedings of a Symposium, P177

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] Cotton F. A., 1998, ADV INORG CHEM, V6

[4] DONNELLY VM, 1984, LASER CHEM PROCESSIN, P15

[5] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[6] FROLOV IA, 1977, IAN SSSR NEORG MATER, V13, P906

[7] Goldstein S., 1965, MODERN DEV FLUID DYN, V1

[8] THE VAPOR-PHASE ULTRAVIOLET-SPECTRA OF METALLO-ORGANIC PRECURSORS TO III-V-COMPOUNDS [J]. JOURNAL OF MATERIALS SCIENCE, 1983, 18 (04) : 1072 - 1076

[9] THE MECHANISM OF THE GROWTH OF INP BY MOCVD - AN INVESTIGATION OF THE PYROLYSES OF SOME GROUP-III METAL-ORGANICS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 67 (01) : 75 - 78

[10] THE MECHANISM OF THE GROWTH OF INP BY MOCVD - A FLOW-TUBE INVESTIGATION OF THE PYROLYSIS OF THE INDIUM PRECURSOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) : 550 - 556

[1] Aylett M. R., 1983, Laser Diagnostics and Photochemical Processing for Semiconductor Devices. Proceedings of a Symposium, P177

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] Cotton F. A., 1998, ADV INORG CHEM, V6

[4] DONNELLY VM, 1984, LASER CHEM PROCESSIN, P15

[5] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[6] FROLOV IA, 1977, IAN SSSR NEORG MATER, V13, P906

[7] Goldstein S., 1965, MODERN DEV FLUID DYN, V1

[8] THE VAPOR-PHASE ULTRAVIOLET-SPECTRA OF METALLO-ORGANIC PRECURSORS TO III-V-COMPOUNDS [J]. JOURNAL OF MATERIALS SCIENCE, 1983, 18 (04) : 1072 - 1076

[9] THE MECHANISM OF THE GROWTH OF INP BY MOCVD - AN INVESTIGATION OF THE PYROLYSES OF SOME GROUP-III METAL-ORGANICS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 67 (01) : 75 - 78

[10] THE MECHANISM OF THE GROWTH OF INP BY MOCVD - A FLOW-TUBE INVESTIGATION OF THE PYROLYSIS OF THE INDIUM PRECURSOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) : 550 - 556