ULTRAVIOLET INDUCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS

被引：29

作者：

BALK, P ^{[1
]}

HEINECKE, H ^{[1
]}

PUTZ, N ^{[1
]}

PLASS, C ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573839

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：711 / 715

页数：5

相关论文

共 18 条

[1] ANDRO H, 1985, J APPL PHYS, V58, P802
[2] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS
AOYAGI, Y
MASUDA, S
NAMBA, S
DOI, A
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 95 - 96
[3] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR
BENEKING, H
ESCOBOSA, A
KRAUTLE, H
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) : 473 - 480
[4] BHAT R, 1982, I PHYS C SER, V63, P101
[5] LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES
DEUTSCH, TF
EHRLICH, DJ
OSGOOD, RM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 175 - 177
[6] DONELLY VM, 1984, APPL PHYS LETT, V44, P951
[7] THE VAPOR-PHASE ULTRAVIOLET-SPECTRA OF METALLO-ORGANIC PRECURSORS TO III-V-COMPOUNDS
HAIGH, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1983, 18 (04) : 1072 - 1076
[8] HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928
[9] PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE
IRVINE, SJC
MULLIN, JB
TUNNICLIFFE, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 188 - 193
[10] JENSEN JE, 1984, UNPUB NOV P MAT RES