EXCIMER LASER-INDUCED DEPOSITION OF INP

被引：11

作者：

DONNELLY, VM

BRASEN, D

APPELBAUM, A

GEVA, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573840

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：716 / 721

页数：6

相关论文

共 23 条

[1] Baeri P., 1982, Laser annealing of semiconductors, P75
[2] Basco N., 1970, INT J CHEM KINET, V2, P215
[3] OSCILLATOR-STRENGTHS OF BANDS OF B2A'1-X2A''2 SYSTEM OF CD3 AND A SPECTROSCOPIC MEASUREMENT OF RECOMBINATION RATE - COMPARISON WITH CH-3
CALLEAR, AB
METCALFE, MP
[J]. CHEMICAL PHYSICS, 1976, 14 (02) : 275 - 284
[4] INFRARED DIELECTRIC CONSTANT AND ULTRAVIOLET OPTICAL PROPERTIES OF SOLIDS WITH DIAMOND ZINC BLENDE WURTZITE AND ROCKSALT STRUCTURE
CARDONA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2181 - &
[5] CULLIS AG, 1979, LASER SOLID INTERACT, P653
[6] EXCIMER LASER-INDUCED DEPOSITION OF INP AND INDIUM-OXIDE FILMS
DONNELLY, VM
GEVA, M
LONG, J
KARLICEK, RF
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 951 - 953
[7] EXCIMER LASER-INDUCED DEPOSITION OF INP - CRYSTALLOGRAPHIC AND MECHANISTIC STUDIES
DONNELLY, VM
BRASEN, D
APPELBAUM, A
GEVA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2022 - 2035
[8] DONNELLY VM, UNPUB
[9] EDEN JG, 1983, MATER RES SOC S P, V17, P185
[10] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448