HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD

被引：163

作者：

DENBAARS, SP ^{[1
]}

MAA, BY ^{[1
]}

DAPKUS, PD ^{[1
]}

DANNER, AD ^{[1
]}

LEE, HC ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90300-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：188 / 193

页数：6

相关论文

共 9 条

[1] FRIJLINK PM, 1982, JAPAN J APPL PHYS, V21, P1574
[2] (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD
FUKUI, T
SAITO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L521 - L523
[3] THE MECHANISM OF THE GROWTH OF INP BY MOCVD - AN INVESTIGATION OF THE PYROLYSES OF SOME GROUP-III METAL-ORGANICS
HAIGH, J
OBRIEN, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 67 (01) : 75 - 78
[4] PYROLYSIS OF TRIMETHYL GALLIUM
JACKO, MG
PRICE, SJW
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06): : 1560 - &
[5] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
VEENVLIET, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153
[6] ON THE REACTION-MECHANISM OF GAAS MOCVD
NISHIZAWA, J
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 413 - 417
[7] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
REEP, DH
GHANDHI, SK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 675 - 680
[8] THE DECOMPOSITION OF ARSINE
TAMARU, K
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (08) : 777 - 780
[9] MASS-SPECTROMETRIC STUDY OF GA(CH3)3 AND GA(C2H5)3 DECOMPOSITION REACTION IN H-2 AND N-2
YOSHIDA, M
WATANABE, H
UESUGI, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) : 677 - 679