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DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
被引:260
作者
:
REEP, DH
论文数:
0
引用数:
0
h-index:
0
REEP, DH
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1983年
/ 130卷
/ 03期
关键词
:
D O I
:
10.1149/1.2119780
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:675 / 680
页数:6
相关论文
共 25 条
[1]
GAAS PHOTO-CATHODES FOR LOW LIGHT LEVEL IMAGING
ANDRE, JP
论文数:
0
引用数:
0
h-index:
0
ANDRE, JP
GUITTARD, P
论文数:
0
引用数:
0
h-index:
0
GUITTARD, P
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
HALLAIS, J
PIAGET, C
论文数:
0
引用数:
0
h-index:
0
PIAGET, C
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 235
-
245
[2]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
: 1473
-
&
[3]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 172
-
178
[4]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
BHAT, R
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0
引用数:
0
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RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
BALIGA, BJ
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0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
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RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1378
-
1382
[5]
COMPARISON OF FET PERFORMANCE VERSUS MATERIAL GROWTH TECHNIQUES
BONNET, M
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0
引用数:
0
h-index:
0
BONNET, M
VISENTIN, N
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0
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VISENTIN, N
BESSONNEAU, G
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0
BESSONNEAU, G
DUCHEMIN, JP
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0
引用数:
0
h-index:
0
DUCHEMIN, JP
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 246
-
254
[6]
MOCVD GROWTH AND CHARACTERIZATION OF GAALAS-GAAS DOUBLE HETEROSTRUCTURES FOR OPTO-ELECTRONIC DEVICES
BRADLEY, RR
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0
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BRADLEY, RR
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 223
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228
[7]
ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
论文数:
0
引用数:
0
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CALAWA, AR
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(09)
: 701
-
703
[8]
PYROLYSIS OF TRIMETHYL GALLIUM
JACKO, MG
论文数:
0
引用数:
0
h-index:
0
JACKO, MG
PRICE, SJW
论文数:
0
引用数:
0
h-index:
0
PRICE, SJW
[J].
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE,
1963,
41
(06):
: 1560
-
&
[9]
INVESTIGATION OF THE PARAMETERS WHICH CONTROL THE GROWTH OF [111] AND [111] FACES OF GAAS BY CHEMICAL VAPOR DEPOSIT
LAPORTE, JL
论文数:
0
引用数:
0
h-index:
0
LAPORTE, JL
CADORET, M
论文数:
0
引用数:
0
h-index:
0
CADORET, M
CADORET, R
论文数:
0
引用数:
0
h-index:
0
CADORET, R
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
50
(03)
: 663
-
674
[10]
A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
论文数:
0
引用数:
0
h-index:
0
LEYS, MR
VEENVLIET, H
论文数:
0
引用数:
0
h-index:
0
VEENVLIET, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 145
-
153
←
1
2
3
→
共 25 条
[1]
GAAS PHOTO-CATHODES FOR LOW LIGHT LEVEL IMAGING
ANDRE, JP
论文数:
0
引用数:
0
h-index:
0
ANDRE, JP
GUITTARD, P
论文数:
0
引用数:
0
h-index:
0
GUITTARD, P
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
HALLAIS, J
PIAGET, C
论文数:
0
引用数:
0
h-index:
0
PIAGET, C
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 235
-
245
[2]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
: 1473
-
&
[3]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 172
-
178
[4]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1378
-
1382
[5]
COMPARISON OF FET PERFORMANCE VERSUS MATERIAL GROWTH TECHNIQUES
BONNET, M
论文数:
0
引用数:
0
h-index:
0
BONNET, M
VISENTIN, N
论文数:
0
引用数:
0
h-index:
0
VISENTIN, N
BESSONNEAU, G
论文数:
0
引用数:
0
h-index:
0
BESSONNEAU, G
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 246
-
254
[6]
MOCVD GROWTH AND CHARACTERIZATION OF GAALAS-GAAS DOUBLE HETEROSTRUCTURES FOR OPTO-ELECTRONIC DEVICES
BRADLEY, RR
论文数:
0
引用数:
0
h-index:
0
BRADLEY, RR
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 223
-
228
[7]
ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
论文数:
0
引用数:
0
h-index:
0
CALAWA, AR
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(09)
: 701
-
703
[8]
PYROLYSIS OF TRIMETHYL GALLIUM
JACKO, MG
论文数:
0
引用数:
0
h-index:
0
JACKO, MG
PRICE, SJW
论文数:
0
引用数:
0
h-index:
0
PRICE, SJW
[J].
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE,
1963,
41
(06):
: 1560
-
&
[9]
INVESTIGATION OF THE PARAMETERS WHICH CONTROL THE GROWTH OF [111] AND [111] FACES OF GAAS BY CHEMICAL VAPOR DEPOSIT
LAPORTE, JL
论文数:
0
引用数:
0
h-index:
0
LAPORTE, JL
CADORET, M
论文数:
0
引用数:
0
h-index:
0
CADORET, M
CADORET, R
论文数:
0
引用数:
0
h-index:
0
CADORET, R
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
50
(03)
: 663
-
674
[10]
A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
论文数:
0
引用数:
0
h-index:
0
LEYS, MR
VEENVLIET, H
论文数:
0
引用数:
0
h-index:
0
VEENVLIET, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 145
-
153
←
1
2
3
→