GAAS PHOTO-CATHODES FOR LOW LIGHT LEVEL IMAGING

被引：57

作者：

ANDRE, JP

GUITTARD, P

HALLAIS, J

PIAGET, C

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90293-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：235 / 245

页数：11

相关论文

共 32 条

[1] GAAS REFLECTION PHOTOCATHODES GROWN BY METAL ALKYL VAPOR-PHASE EPITAXY
ALLENSON, M
BASS, SJ
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 113 - 115
[2] ALLENSON MB, 1972, APPL PHYS D, V5, pL89
[3] ANDRE JP, 1981, I PHYS C SER, V56, P413
[4] BROAD-BAND GAAS TRANSMISSION PHOTO-CATHODE
ANTYPAS, GA
ESCHER, JS
EDGECUMBE, J
ENCK, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4301 - 4301
[5] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE
ANTYPAS, GA
EDGECUMBE, J
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 371 - 372
[6] Balashova A. P., 1977, Radio Engineering and Electronic Physics, V22, P133
[7] BAN VS, 1979, P CHEM VAPOR DEPOSIT, P102
[8] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
CASEY, HC
SELL, DD
WECHT, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257
[9] GAAS TRANSMISSION PHOTO-CATHODE GROWN BY MBE
CHINEN, K
NIIGAKI, M
MIYAO, M
HAGINO, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : L703 - L706
[10] SIMPLE INTERNAL PHOTOEMISSION METHOD FOR DETERMINING SHAPE OF YIELD CURVES OF NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS
ESCHER, JS
WILLIAMS, BF
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 525 - 526

← 1 2 3 4 →