GAAS TRANSMISSION PHOTO-CATHODE GROWN BY MBE

被引：4

作者：

CHINEN, K

NIIGAKI, M

MIYAO, M

HAGINO, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 11期

关键词：

D O I：

10.1143/JJAP.19.L703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L703 / L706

页数：4

共 10 条

[1] IMPROVED GAAS TRANSMISSION PHOTOCATHODE [J].

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ROWLAND, MC ;

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SYMS, CHA ;

KING, PGR .

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[2] BROAD-BAND GAAS TRANSMISSION PHOTO-CATHODE [J].

ANTYPAS, GA ;

ESCHER, JS ;

EDGECUMBE, J ;

ENCK, RS .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4301-4301

[3]

BEAN JC, 1979, APPL PHYS LETT, V35, P929

[4] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284

[5] PROPERTIES OF HIGH-SENSITIVITY GAP-INXGA1-XP-GAAS - (CS-O) TRANSMISSION PHOTO-CATHODES [J].

FISHER, DG ;

OLSEN, GH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2930-2935

[6] GAAS TRANSMISSION PHOTOCATHODE GROWN BY HYBRID EPITAXY [J].

GUTIERRE.WA ;

WILSON, HL ;

YEE, EM .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :482-483

[7] HIGH-SENSITIVITY TRANSMISSION-MODE GAAS PHOTOCATHODE [J].

GUTIERREZ, WA ;

POMMERRENIG, HD .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :292-293

[8] PRESENT STATUS AND FUTURE-DIRECTIONS FOR MBE [J].

JOYCE, BA .

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[9] QUANTUM YIELD OF GAAS SEMITRANSPARENT PHOTOCATHODE [J].

LIU, YZ ;

MOLL, JL ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1970, 17 (02) :60-&

[10] IONIZED ZN DOPING OF GAAS MOLECULAR-BEAM EPITAXIAL-FILMS [J].

NAGANUMA, M ;

TAKAHASHI, K .

APPLIED PHYSICS LETTERS, 1975, 27 (06) :342-344

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