PROPERTIES OF HIGH-SENSITIVITY GAP-INXGA1-XP-GAAS - (CS-O) TRANSMISSION PHOTO-CATHODES

被引：14

作者：

FISHER, DG ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.326214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Negative electron affinity (NEA) GaAs photocathodes were vapor grown on GaP/InxGa1-xP substrates with 0.4<x<0.65. The dependence of cathode sensitivity, electron diffusion length, cathode back-interface recombination velocity, and surface-escape probability on buffer-layer composition was determined. The optimal InxGa 1-xP composition for these samples was in the range of 52-55% InP. Indium unintentionally introduced into the GaAs causes a shift in the In xGa1-xP composition for good lattice match. SIMS and AES measurements were made to obtain the chemical and electronic structure of the epitaxial layers. The photosensitivity dependence on both Zn doping concentration and cathode thickness are presented. The highest transmission mode photosensitivity measured was 740 μA/lm.

引用

页码：2930 / 2935

页数：6

共 26 条

[1] MICROSTRUCTURAL EFFECTS ON MINORITY-CARRIER DIFFUSION LENGTH IN EPITAXIAL GAAS [J].