HIGH-SENSITIVITY TRANSMISSION-MODE GAAS PHOTOCATHODE

[1] OPERATION OF III-V SEMICONDUCTOR PHOTOCATHODES IN SEMITRANSPARENT MODE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2888 - &

[2] BELL RL, 1970, P IEEE, V58, P1783

[3] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 371 - &

[4] PHOTOEMISSION YIELD DEPENDENCY ON BANDGAP ENERGY FOR GAINAS ALLOYS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (01): : 90 - &

[5] QUANTUM YIELD OF GAAS SEMITRANSPARENT PHOTOCATHODE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (02) : 60 - &

[6] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +

[7] TURNBULL AA, 1968, BRIT J APPL PHYS, V21, P155

[8] CURRENT STATUS OF NEGATIVE ELECTRON AFFINITY DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1489 - +

[1] OPERATION OF III-V SEMICONDUCTOR PHOTOCATHODES IN SEMITRANSPARENT MODE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2888 - &

[2] BELL RL, 1970, P IEEE, V58, P1783

[3] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 371 - &

[4] PHOTOEMISSION YIELD DEPENDENCY ON BANDGAP ENERGY FOR GAINAS ALLOYS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (01): : 90 - &

[5] QUANTUM YIELD OF GAAS SEMITRANSPARENT PHOTOCATHODE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (02) : 60 - &

[6] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +

[7] TURNBULL AA, 1968, BRIT J APPL PHYS, V21, P155

[8] CURRENT STATUS OF NEGATIVE ELECTRON AFFINITY DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1489 - +