PRESENT STATUS AND FUTURE-DIRECTIONS FOR MBE

被引：9

作者：

JOYCE, BA

机构：

[1] Philips Research Laboratories, Redhill, Surrey England

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90383-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This article is a summary of the present level of understanding of various aspects of the MBE, process, concentrating on problem areas related to the growth of III-V compounds and alloys. These include film doping, deep level incorporation, alloy composition control, defect structures and homogeneity. The position on periodic superlattices is briefly summarized, and the application of MBE to μ-wave and optoelectronic devices and also the surface physics of III-V materials is discussed. © 1979.

引用

页码：92 / 101

页数：10

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