MOCVD GROWTH AND CHARACTERIZATION OF GAALAS-GAAS DOUBLE HETEROSTRUCTURES FOR OPTO-ELECTRONIC DEVICES

被引：14

作者：

BRADLEY, RR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90291-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：223 / 228

页数：6

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