VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS

被引：33

作者：

BHAT, R ^{[1
]}

BALIGA, BJ ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 10期

关键词：

D O I：

10.1149/1.2134021

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1378 / 1382

页数：5

共 9 条

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[4]

LANG GA, 1963, RCA REV, V24, P488

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CHOW, L .

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[6] AUGER SPECTRA OF HCL VAPOR-ETCHED N+ GAAS (100) SUBSTRATES [J].

MOON, RL ;

JAMES, LW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :581-583

[7]

REISMAN A, 1965, J ELCHEM SO, V118, P812

[8]

SHAIKH SA, 1974, MAY EL SOC SPR M SAN, P364

[9] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J].

SHEPHERD, WH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :988-&

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