ACCUMULATION AND INVERSION-LAYER HALL MOBILITIES IN SILICON FILMS ON SAPPHIRE

被引：6

作者：

IPRI, AC ^{[1
]}

机构：

[1] RCA CORP,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 01期

关键词：

D O I：

10.1063/1.1654455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：16 / 18

页数：3

共 12 条

[1]

BOLEKY EJ, 1970, RCA REV, V31, P372

[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J].

COLMAN, D ;

BATE, RT ;

MIZE, JP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1923-&

[3] PREPARATION AND PROPERTIES OF CHEMICALLY VAPOR DEPOSITED SILICON ON SAPPHIRE AND SPINEL [J].

CULLEN, GW .

JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :107-+

[4] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[5] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[6] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J].

GNADINGER, AP ;

TALLEY, HE .

SOLID-STATE ELECTRONICS, 1970, 13 (09) :1301-+

[7]

HEIMAN FP, 1966, IEEE T, VED13, P855

[8] ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J].

IPRI, AC .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2770-+

[9]

IPRI AC, TO BE PUBLISHED

[10] HALL-EFFECT MEASUREMENTS OF HOLE MOBILITY IN AN INVERSION LAYER OF A MOS STRUCTURE AT LOW-TEMPERATURES [J].

RIBEIRO, CA ;

PFISTER, JC .

SOLID STATE COMMUNICATIONS, 1972, 10 (01) :63-&

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