HALL-EFFECT MEASUREMENTS OF HOLE MOBILITY IN AN INVERSION LAYER OF A MOS STRUCTURE AT LOW-TEMPERATURES

被引:10
作者
RIBEIRO, CA
PFISTER, JC
机构
关键词
D O I
10.1016/0038-1098(72)90349-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:63 / &
相关论文
共 6 条
[1]  
ASHE M, 1970, PHYS STATUS SOLIDI, V37, P433
[2]   EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN INVERSION LAYER ON P-TYPE SILICON ( TRANSVERSE ELECTRIC FIELD EFFECT ON CARRIER MOBILITY E/T ) [J].
FANG, F ;
TRIEBWASSER, S .
APPLIED PHYSICS LETTERS, 1964, 4 (08) :145-&
[3]   2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J].
KAWAJI, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) :906-&
[4]  
RICO T, 1971, PHYS STATUS SOLIDI, V5, P209
[5]   EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].
SCHRIEFFER, JR .
PHYSICAL REVIEW, 1955, 97 (03) :641-646
[6]   PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].
STERN, F ;
HOWARD, WE .
PHYSICAL REVIEW, 1967, 163 (03) :816-&