THE FORMATION OF ALXGA1-XAS LAYERS BY REGROWTH ON THE SURFACE OF GAAS DURING ITS CONTACT WITH THE UNDERSATURATED LIQUID-CONTAINING AL

被引：12

作者：

BOLKHOVITYANOV, YB

BOLKHOVITYANOVA, RI

VAULIN, YD

GAVRILOVA, TA

OLSHANETSKY, BZ

STENIN, SI

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 78卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90069-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：335 / 341

页数：7

共 9 条

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[5] GROWTH AND PROPERTIES OF GRADED BAND-GAP ALXGA1-XAS LAYERS [J].

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[6] ISOTHERMAL LPE GROWTH OF THIN GRADED BAND-GAP ALXGA1-X AS LAYERS [J].

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PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6902-6906

[7] CALCULATION OF THE AL-GA-IN-AS PHASE-DIAGRAM AND LPE GROWTH OF ALXGAYIN1-X-YAS ON INP [J].

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AKITA, K .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :232-238

[8] FORMATION OF GA1-XALX AS LAYERS ON THE SURFACE OF GAAS DURING CONTINUAL DISSOLUTION INTO GA-AL-AS SOLUTIONS [J].

SMALL, MB ;

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[9]

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