SOME INVESTIGATIONS ON ANODIC OXIDE-FILMS ON GALLIUM-ARSENIDE

被引：5

作者：

GHOSH, C

POLHAMUS, W

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：837 / 839

页数：3

共 15 条

[1]

BENNINGHOVEN A, 1973, THIN SOLID FILMS, V12, P439

[2] INVESTIGATION OF ANODICALLY GROWN FILMS ON GAAS USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

BREEZE, PA ;

HARTNAGEL, HL ;

SHERWOOD, PMA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :454-461

[3] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

SCHWARTZ, B ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926

[4]

COUGHLIN JP, 1954, BULL, V452

[5]

CROZET M, 1979, J ELECTROCHEM SOC, V126, P1543

[6] COMBINED USE OF HE BACKSCATTERING AND HE-INDUCED X-RAYS IN STUDY OF ANODICALLY GROWN OXIDE-FILMS ON GAAS [J].

FELDMAN, LC ;

POATE, JM ;

ERMANIS, F ;

SCHWARTZ, B .

THIN SOLID FILMS, 1973, 19 (01) :81-89

[7] COMBINED RHEED-AES STUDY OF THE THERMAL-TREATMENT OF (001) GAAS SURFACE PRIOR TO MBE GROWTH [J].

LAURENCE, G ;

SIMONDET, F ;

SAGET, P .

APPLIED PHYSICS, 1979, 19 (01) :63-70

[8] HIGH-YIELD PROCESS FOR GAAS ENHANCEMENT-MODE MESFET INTEGRATED-CIRCUITS [J].

MUN, J ;

PHILLIPS, JA ;

BARRY, BE .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (04) :144-147

[9] PREPARATION OF CARBON-FREE GAAS-SURFACES - AES AND RHEED ANALYSIS [J].

MUNOZYAGUE, A ;

PIQUERAS, J ;

FABRE, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :149-153

[10] ANODIZATION OF GAAS AND GAP IN AQUEOUS-SOLUTIONS [J].

SCHWARTZ, B ;

ERMANIS, F ;

BRASTAD, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1089-1097

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