INVESTIGATION OF ANODICALLY GROWN FILMS ON GAAS USING X-RAY PHOTOELECTRON-SPECTROSCOPY

被引:52
作者
BREEZE, PA
HARTNAGEL, HL
SHERWOOD, PMA
机构
[1] UNIV NEWCASTLE UPON TYNE,DEPT INORGAN CHEM,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND
[2] UNIV NEWCASTLE UPON TYNE,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND
关键词
D O I
10.1149/1.2129687
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:454 / 461
页数:8
相关论文
共 18 条
[1]  
ANSELL RO, J ELECTROANAL CHEM I
[2]   FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].
BAYRAKTAROGLU, B ;
KOHN, E ;
HARTNAGEL, HL .
ELECTRONICS LETTERS, 1976, 12 (02) :53-54
[3]   ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICES [J].
BREEZE, PA ;
HARTNAGEL, HL .
THIN SOLID FILMS, 1979, 56 (1-2) :51-61
[4]  
Carlson T. A., 1972, Journal of Electron Spectroscopy and Related Phenomena, V1, P161, DOI 10.1016/0368-2048(72)80029-X
[5]  
Carlson TA, 1975, PHOTOELECTRON AUGER, P24
[6]   ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].
CHANG, CC ;
SCHWARTZ, B ;
MURARKA, SP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926
[7]  
CROSET M, 1978, MAY EL SOC M SEATTL
[8]   ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].
HASEGAWA, H ;
HARTNAGEL, HL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723
[9]  
Hedman J., 1972, PHYS SCRIPTA, V5, P93, DOI [10.1088/0031-8949/5/1-2/015, DOI 10.1088/0031-8949/5/1-2/015]
[10]   GAAS ENHANCEMENT-DEPLETION N-CHANNEL MOSFET [J].
KOHN, E ;
COLQUHOUN, A ;
HARTNAGEL, HL .
SOLID-STATE ELECTRONICS, 1978, 21 (06) :877-886