ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICES

被引：16

作者：

BREEZE, PA

HARTNAGEL, HL

机构：

[1] Department of Electrical and Electronic Engineering, University of Newcastle upon Tyne

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90051-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Our present understanding of the factors which affect the growth and properties of the anodic oxides of GaAs is reviewed. The various parameters which affect film composition are discussed and some new data from studies by electron spectroscopy for chemical analysis are given. An anodic growth mechanism is postulated which involves the interstitial ion drift of gallium and arsenic ions and a vacancy transport mechanism for oxygen. Experimental evidence in support of this is discussed. A brief review of the electrical properties of GaAs anodic native oxides is given. Areas in which further work is required are outlined. © 1979.

引用

页码：51 / 61

页数：11

共 34 条

[1] THE USE OF IONIZATION POTENTIALS .1. IONIC RADII OF THE ELEMENTS [J].