INHIBITED DARK-LINE DEFECT FORMATION IN STRAINED INGAAS/ALGAAS QUANTUM-WELL LASERS

被引:83
作者
WATERS, RG [1 ]
BOUR, DP [1 ]
YELLEN, SL [1 ]
RUGGIERI, NF [1 ]
机构
[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543
关键词
D O I
10.1109/68.58039
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Dark-line defect formation is compared’ in GaAs/AIGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along (100) in GaAs qnantnm well lasers, causing rapid degradation. In contrast, the (100) dark-line defect is snppressed in the structnres with a strained InGaAs quantum well, so that rapid degradation does not occur. © 1990 IEEE
引用
收藏
页码:531 / 533
页数:3
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