INHIBITED DARK-LINE DEFECT FORMATION IN STRAINED INGAAS/ALGAAS QUANTUM-WELL LASERS

被引：83

作者：

WATERS, RG ^{[1
]}

BOUR, DP ^{[1
]}

YELLEN, SL ^{[1
]}

RUGGIERI, NF ^{[1
]}

机构：

[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 08期

关键词：

D O I：

10.1109/68.58039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dark-line defect formation is compared’ in GaAs/AIGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along (100) in GaAs qnantnm well lasers, causing rapid degradation. In contrast, the (100) dark-line defect is snppressed in the structnres with a strained InGaAs quantum well, so that rapid degradation does not occur. © 1990 IEEE

引用

页码：531 / 533

页数：3

共 11 条

[1] CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS [J].