LONG-LIVED INGAAS QUANTUM WELL LASERS

被引：48

作者：

FISCHER, SE

WATERS, RG

FEKETE, D

BALLANTYNE, JM

CHEN, YC

SOLTZ, BA

机构：

[1] CORNELL UNIV,SCH ELECT ENGN & FIELD APPL PHYS,PHILLIPS HALL,ITHACA,NY 14853

[2] MCDONNELL DOUGLAS ASTRONAUT CO,CTR OPTOELECTR,ELMSFORD,NY 10523

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期

关键词：

D O I：

10.1063/1.101260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1861 / 1862

页数：2

共 14 条

[1] HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY [J].

BAILLARGEON, JN ;

YORK, PK ;

ZMUDZINSKI, CA ;

FERNANDEZ, GE ;

BEERNINK, KJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :457-459

[2] REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES [J].

ETTENBERG, M ;

NUESE, CJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2137-2142

[3] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETA, D ;

CHAN, KT ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[4] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].

FISCHER, SE ;

FEKETE, D ;

FEAK, GB ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716

[5] ACCELERATED AGING OF 100-MW CW MULTIPLE-STRIPE GAALAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HARNAGEL, GL ;

PAOLI, TL ;

THORNTON, RL ;

BURNHAM, RD ;

SMITH, DL .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :118-120

[6] DISLOCATION PINNING IN GAAS BY DELIBERATE INTRODUCTION OF IMPURITIES [J].

KIRKBY, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :562-568

[7] STRAINED-LAYER INGAAS-GAAS-ALGAAS PHOTOPUMPED AND CURRENT INJECTION-LASERS [J].

KOLBAS, RM ;

ANDERSON, NG ;

LAIDIG, WD ;

SIN, YK ;

LO, YC ;

HSIEH, KY ;

YANG, YJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1605-1613

[8] STRAINED-LAYER QUANTUM-WELL INJECTION-LASER [J].

LAIDIG, WD ;

CALDWELL, PJ ;

LIN, YF ;

PENG, CK .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :653-655

[9] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS [J].

LAIDIG, WD ;

LIN, YF ;

CALDWELL, PJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :33-38

[10] CONTINUOUS OPERATION OF HIGH-POWER (200 MW) STRAINED-LAYER GA1-XINXAS/GAAS QUANTUM-WELL LASERS WITH EMISSION WAVELENGTHS 0.87 LESS-THAN-OR-EQUAL TO LAMBDA LESS-THAN-OR-EQUAL TO 0.95 MU-M [J].

STUTIUS, W ;

GAVRILOVIC, P ;

WILLIAMS, JE ;

MEEHAN, K ;

ZARRABI, JH .

ELECTRONICS LETTERS, 1988, 24 (24) :1493-1494

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