REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES

被引：26

作者：

ETTENBERG, M ^{[1
]}

NUESE, CJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2137 / 2142

页数：6

相关论文

共 19 条

[1] RADIATIVE RECOMBINATION IN ANNEALED ELECTRON-IRRADIATED GAAS
ARNOLD, GW
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 679 - &
[2] REFINED STEP-RECOVERY TECHNIQUE FOR MEASURING MINORITY CARRIER LIFETIMES AND RELATED PARAMETERS IN ASYMMETRIC P-N JUNCTION DIODES
DEAN, RH
NUESE, CJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) : 151 - &
[3] DEGRADATION OF ALXGA1-X AS HETEROJUNCTION ELECTROLUMINESCENT DEVICES
ETTENBERG, M
KRESSEL, H
LOCKWOOD, HF
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (01) : 82 - 85
[4] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS
ETTENBERG, M
NUESE, CJ
APPERT, JR
GANNON, JJ
ENSTROM, RE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66
[5] PERMANENT DEGRADATION OF GAAS TUNNEL DIODES
GOLD, RD
WEISBERG, LR
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (11) : 811 - 821
[6] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS
HARTMAN, RL
HARTMAN, AR
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 147 - 149
[7] EVIDENCE FOR ROLE OF CERTAIN METALLURGICAL FLAWS IN ACCELERATING ELECTROLUMINESCENT DIODE DEGRADATION
KRESSEL, H
BYER, NE
LOCKWOOD, H
HAWRYLO, FZ
NELSON, H
ABRAHAMS, MS
MCFARLAN.SH
[J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 635 - &
[8] KRESSEL H, COMMUNICATION
[9] KRESSEL H, 1974, J PHYS C, V3, P224
[10] LADANY I, 1974, 5TH INT S GAAS REL C