ELECTROLESS GOLD PLATING ON III-V COMPOUND-CRYSTALS

[1] IMPROVED PERFORMANCE OF GAAS MICROWAVE FIELD-EFFECT TRANSISTORS WITH LOW INDUCTANCE VIA-CONNECTIONS THROUGH SUBSTRATE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1218 - 1221

[2] DEANGELO MA, 1969, Patent No. 3485665

[3] ELLIOTT RP, 1965, CONSTITUTION BINAR S, P5430

[4] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5] HIRSCH PB, 1965, TRANSMISSION ELECTRO

[6] Latimer W.M, 1952, OXIDATION POTENTIAL

[7] MATTOX DM, 1978, ADHESION MEASUREMENT

[8] NAKAHARA S, 1975, PROPERTIES ELECTRODE, pCH3

[9] SOME PRACTICAL ASPECTS OF ELECTROLESS GOLD PLATING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) : 56 - 62

[10] Okinaka Y, 1970, PLATING, V57, P914

[1] IMPROVED PERFORMANCE OF GAAS MICROWAVE FIELD-EFFECT TRANSISTORS WITH LOW INDUCTANCE VIA-CONNECTIONS THROUGH SUBSTRATE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1218 - 1221

[2] DEANGELO MA, 1969, Patent No. 3485665

[3] ELLIOTT RP, 1965, CONSTITUTION BINAR S, P5430

[4] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5] HIRSCH PB, 1965, TRANSMISSION ELECTRO

[6] Latimer W.M, 1952, OXIDATION POTENTIAL

[7] MATTOX DM, 1978, ADHESION MEASUREMENT

[8] NAKAHARA S, 1975, PROPERTIES ELECTRODE, pCH3

[9] SOME PRACTICAL ASPECTS OF ELECTROLESS GOLD PLATING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) : 56 - 62

[10] Okinaka Y, 1970, PLATING, V57, P914