BORON-NITRIDE THIN-FILMS BY MICROWAVE ECR PLASMA CHEMICAL-VAPOR-DEPOSITION

被引:15
作者
PAISLEY, MJ [1 ]
BOURGET, LP [1 ]
DAVIS, RF [1 ]
机构
[1] APPL SCI & TECHNOL ASTEX INC,WOBURN,MA 01801
关键词
D O I
10.1016/0040-6090(93)90238-K
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The objective of this study was the deposition of BN on Si (100) and (111) using microwave electron cyclotron resonance plasma chemical vapor deposition with borazine as the source material. Films were deposited and analyzed employing the techniques of ellipsometry, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy and Fourier transform infrared spectroscopy. Results indicated that the deposited films were composed of microcrystals of c-BN and oriented hexagonal BN as well as amorphous BN.
引用
收藏
页码:30 / 34
页数:5
相关论文
共 21 条
[1]   THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].
BRAVMAN, JC ;
SINCLAIR, R .
JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61
[2]   PLASMA ASSISTED DEPOSITION TECHNIQUES AND SYNTHESIS OF NOVEL MATERIALS [J].
DESHPANDEY, C ;
BUNSHAH, RF .
THIN SOLID FILMS, 1988, 163 :131-147
[3]  
DEVRIES RC, 1972, TECHNICAL INFORMATIO
[4]  
HELLWEGE KH, 1987, LANDOLTBORNSTEIN 3
[5]   EVALUATION OF A NEW PLASMA SOURCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF INN AND GAN FILMS [J].
HOKE, WE ;
LEMONIAS, PJ ;
WEIR, DG .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :1024-1028
[6]   FORMATION OF CUBIC BORON-NITRIDE FILMS BY ARC-LIKE PLASMA-ENHANCED ION PLATING METHOD [J].
IKEDA, T ;
KAWATE, Y ;
HIRAI, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3168-3174
[7]  
IKEDA T, 1989, KOBELCO TECHNOL REV, V6, P1
[8]  
INAGAWA K, 1988, NEW DIAMOND, P60
[9]  
Kouvetakis J., 1990, J VAC SCI TECHNOL A, V8, P3929
[10]  
Lipp A., 1989, Journal of the European Ceramic Society, V5, P3, DOI 10.1016/0955-2219(89)90003-4