SOURCE POSITION EFFECT IN GAMMA-RAY ENERGY MEASUREMENTS WITH GE(LI) DETECTORS

被引：10

作者：

SHIZUMA, K ^{[1
]}

INOUE, H ^{[1
]}

YOSHIZAWA, Y ^{[1
]}

SAKAI, E ^{[1
]}

KATAGIRI, M ^{[1
]}

机构：

[1] JAPAN ATOM ENERGY RES INST, TOKAI, IBARAKI 31911, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 157卷 / 01期

关键词：

D O I：

10.1016/0029-554X(78)90595-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：117 / 126

页数：10

共 18 条

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[9] EFFECT OF CHARGE TRAPPING ON SPECTROMETER PERFORMANCE OF P-I-N SEMICONDUCTOR DETECTORS [J].

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[10]

REASIDE DE, 1969, NUCL PHYS A, V134, P347

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