ELECTRONIC BAND-STRUCTURE OF GAAS SAWTOOTH-DOPING SUPERLATTICES

被引：5

作者：

FERREYRA, JM ^{[1
]}

PROETTO, CR ^{[1
]}

机构：

[1] CTR ATOM BARILOCHE,RA-8400 BARILOCHE,ARGENTINA

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.42.5657

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report simple calculations (of the Kronig-Penney type) concerning the band structure and charge distribution of GaAs sawtooth-doping superlattices as a function of period and doping concentration. We have obtained, within the effective-mass approximation, analytic expressions for the subband energy levels and envelope wave functions of the system. © 1990 The American Physical Society.

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页码：5657 / 5664

页数：8

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