OPTICAL-RECORDING IN AMORPHOUS-SILICON FILMS

[1] HIGH-DENSITY OPTICAL-RECORDING WITH (GA,AL)AS DH LASERS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 835 - 837

[2] SINGLE TE-FILMS AND TE-TRILAYERS FOR OPTICAL-RECORDING [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 81 - 83

[3] CHANGE OF ETCH RATE ASSOCIATED WITH AMORPHOUS TO CRYSTALLINE TRANSITION IN CVD LAYERS OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (10) : 873 - 874

[4] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 11 - 27

[5] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[6] STREET J, 1980, ELECTR OPT SYST DES, V12, P31

[7] THOMAS W, 1973, HDB PHOTOGRAPHIC SCI, P297

[8] ZECH RG, 1979, SPIE J, V177, P56

[1] HIGH-DENSITY OPTICAL-RECORDING WITH (GA,AL)AS DH LASERS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 835 - 837

[2] SINGLE TE-FILMS AND TE-TRILAYERS FOR OPTICAL-RECORDING [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 81 - 83

[3] CHANGE OF ETCH RATE ASSOCIATED WITH AMORPHOUS TO CRYSTALLINE TRANSITION IN CVD LAYERS OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (10) : 873 - 874

[4] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 11 - 27

[5] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[6] STREET J, 1980, ELECTR OPT SYST DES, V12, P31

[7] THOMAS W, 1973, HDB PHOTOGRAPHIC SCI, P297

[8] ZECH RG, 1979, SPIE J, V177, P56