CHANGE OF ETCH RATE ASSOCIATED WITH AMORPHOUS TO CRYSTALLINE TRANSITION IN CVD LAYERS OF SILICON

被引：8

作者：

BOXALL, BA ^{[1
]}

机构：

[1] POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 10期

关键词：

D O I：

10.1016/0038-1101(77)90177-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：873 / 874

页数：2

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[2] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3
[3] VACUUM-DEPOSITED SILICON DEVICES ON FUSED SILICA SUBSTRATES
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