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ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111)
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (22)
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STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG
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PHYSICAL REVIEW B,
1981, 24 (08)
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ELECTRONIC AND ATOMIC-STRUCTURE OF SI(111) AL, AG, AND NI METAL OVERLAYER INDUCED SURFACE RECONSTRUCTIONS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 18 (02)
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ELECTRONIC-STRUCTURE OF BUCKLED AND VACANCY MODELS OF SI(111)-7X7 SURFACE BY DV-X-ALPHA CLUSTER METHOD
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (15)
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[9]
PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P54