THE ROLE OF SURFACE AND GAS-PHASE REACTIONS IN ATOMIC LAYER EPITAXY

被引：10

作者：

DAPKUS, PD ^{[1
]}

DENBAARS, SP ^{[1
]}

CHEN, Q ^{[1
]}

JEONG, WG ^{[1
]}

MAA, BY ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1989年 / 19卷 / 1-2期

关键词：

D O I：

10.1016/0146-3535(89)90019-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：137 / 147

页数：11

相关论文

共 12 条

[1] ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY
AOYAGI, Y
DOI, A
IWAI, S
NAMBA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1460 - 1464
[2] HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD
DENBAARS, SP
MAA, BY
DAPKUS, PD
DANNER, AD
LEE, HC
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 188 - 193
[3] PYROLYSIS OF TRIMETHYL GALLIUM
JACKO, MG
PRICE, SJW
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06): : 1560 - &
[4] JEONG WG, 1989, IN PRESS APPL PHYS L
[5] KAKIBAYASHI H, 1986, SURF SCI, V74, P84
[6] A HIGH INTENSITY SOURCE FOR THE MOLECULAR BEAM .1. THEORETICAL
KANTROWITZ, A
GREY, J
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1951, 22 (05) : 328 - 332
[7] MOLECULAR LAYER EPITAXY
NISHIZAWA, J
ABE, H
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200
[8] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM
OZEKI, M
MOCHIZUKI, K
OHTSUKA, N
KODAMA, K
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1509 - 1511
[9] ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CDTE-FILMS GROWN ON CDTE (110) SUBSTRATES
PESSA, M
HUTTUNEN, P
HERMAN, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 6047 - 6050
[10] PESSA M, 1980, APPL PHYS LETT, V38, P131