Characterisation of CdTe/GaAs heterojunctions with photovoltage measurements

被引：5

作者：

Masut, RA ^{[1
]}

Roth, AP ^{[1
]}

Dubowski, JJ ^{[1
]}

Lenchyshyn, LC ^{[1
]}

机构：

[1] Natl Res Council Canada, Div Chem, Semicond Res Grp, Ottawa, ON K1A 0R6, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 03期

关键词：

ELECTRIC MEASUREMENTS - Voltage - SEMICONDUCTING CADMIUM COMPOUNDS - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1088/0268-1242/1/3/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photovoltage measurements have been used to characterise the CdTe/GaAs interface of thin CdTe epilayers grown on conducting GaAs substrates by a Pulsed Laser Evaporation (PLE) technique. Defect states were observed which gave rise to a spectral band which peaked at photon energies below the band gap of both semiconductors. A high density of these defect states correlates with non-uniform epitaxy in these significantly lattice mismatched heterojunctions which may lead to unpredictable electrical properties. Residual donor impurities at 17 meV below the bottom of the CdTe conduction band, and acceptor levels at 50 meV from the valence band were also detected in a better quality sample.

引用

页码：226 / 229

页数：4

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