MN DOPED ZNS AND ZNS-CDS SUPERLATTICE DOUBLE INSULATING ELECTROLUMINESCENT DEVICES MADE BY HOT WALL EPITAXY

Double insulating (Ta2O5) EL devices containing various kinds of active layer consisting of combination of Mn doped ZnS and a ZnS-CdS superlattice (SL) were made by hot wall epitaxy. All of the devices containing the superlattice structure operated at lower driving voltage than the device consisting only of a ZnS active layer. The smaller energy gap of the SL is considered to cause the lower driving voltage. The characteristics are a drive peak voltage (V0-p) of 90 V at 1 cd/m2 and 1 kHz, and a maximum illuminance of 1200 cd/m2 at 300 V for the device with a ZnS active layer sandwiched between SL structures.