TRANSFERRED CHARGE IN THE ACTIVE LAYER AND EL DEVICE CHARACTERISTICS OF TFEL CELLS

被引:70
作者
ONO, YA
KAWAKAMI, H
FUYAMA, M
ONISAWA, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 09期
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D O I
10.1143/JJAP.26.1482
中图分类号
O59 [应用物理学];
学科分类号
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页码:1482 / 1492
页数:11
相关论文
共 11 条
[1]  
CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878
[2]  
MILLER MR, 1982, P SID, V23, P85
[3]  
MILLER MR, 1982, 1982 SID INT S LOS A, V13, P120
[4]  
MILLER MR, 1981, 1981 SID INT S LOS A, V12, P26
[5]  
MORTON DC, 1985, 1985 INT DISPL RES C, P185
[6]   CURRENT AND FIELD CHARACTERISTICS AND MEMORY MECHANISM OF TFEL DEVICES [J].
ONNAGAWA, H ;
SHIBATA, M ;
MIYASHITA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01) :12-16
[7]   MODELING AC THIN-FILM ELECTROLUMINESCENT DEVICES [J].
SMITH, DH .
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) :209-235
[8]   ELECTRICAL AND OPTICAL CHARACTERISTICS OF THIN-FILM ELECTROLUMINESCENT DEVICES AND DEVICE MODELS [J].
SMITH, DH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1850-1851
[9]   CHOICE OF DIELECTRICS FOR TFEL DISPLAYS [J].
TIKU, SK ;
SMITH, GC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :105-108
[10]   MECHANISMS OF THE NEGATIVE-RESISTANCE CHARACTERISTICS IN AC THIN-FILM ELECTROLUMINESCENT DEVICES [J].
YANG, KWC ;
OWEN, SJT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (05) :452-459